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February 8, 2012
IRS2113MPBF
HIGH- AND LOW-SIDE DRIVER
Features
Product Summary
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Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage – dV/dt
immune
Gate drive supply range from 10 V to 20 V
Undervoltage lockout for both channels
3.3 V input logic compatible
Separate logic supply range from 3.3 V to 20 V
Logic and power ground ±5 V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Output in phase with inputs
Leadfree, RoHS Compliant
Topology
V OFFSET
V OUT
I o+ & I o- (typical)
t ON & t OFF (typical)
Delay Matching
Package Option
2 channels
600 V max
10 V – 20 V
2.5 A / 2.5 A
130 ns & 120 ns
20 ns max
Description
The IRS2113MPBF is a high voltage, high speed power
MOSFET and IGBT drivers with independent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable
MLPQ4x4-16-Lead
(without 2 leads)
ruggedized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL output,
down to 3.3 V logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver
cross-conduction. Propagation delays are matched to
simplify use in high frequency applications. The floating
channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration which
operates up to 600 V.
Typical Connection Diagram
(Refer to Leads Assignment for correct pin configurations) This diagram shows electrical connections only.
Please refer to our Application Notes and Design Tips for proper circuit board layout.
www.irf.com
? 2008 International Rectifier
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